100-nm lateral size ferroelectric memory cells fabricated by electron-beam direct writing
T. Ohshima, K. Abe, H. Itoh, M. Yoshikawa, K. Kojima, I. Nashiyama, S. OkadaVolume:
70
Language:
english
Pages:
5
DOI:
10.1007/s003390050043
Date:
March, 2000
File:
PDF, 85 KB
english, 2000