Impact of WFV on electrical parameters due to high-k/metal gate in SiGe channel tunnel FET
Saha, Rajesh, Bhowmick, Brinda, Baishya, SrimantaLanguage:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.04.024
Date:
April, 2019
File:
PDF, 1.22 MB
english, 2019