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Influence of various NO annealing conditions on N-type and P-type 4H-SiC MOS capacitors
Jia, Yifan, Lv, Hongliang, Tang, Xiaoyan, Han, Chao, Song, Qingwen, Zhang, Yimen, Zhang, Yuming, Dimitrijev, Sima, Han, Jisheng, Haasmann, DanielLanguage:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-019-01368-z
Date:
April, 2019
File:
PDF, 4.08 MB
english, 2019