Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs
Makarov, Alexander, Kaczer, Ben, Roussel, Philippe, Chasin, Adrian, Grill, Alexander, Vandemaele, Michiel, Hellings, Geert, El-Sayed, Al-Moatasem, Grasser, Tibor, Linten, Dimitri, Tyaginov, StanislavYear:
2019
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2913625
File:
PDF, 1.56 MB
english, 2019