Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory
Lin, Chun-Chu, Chen, Po-Hsun, Chen, Min-Chen, Chang, Ting-Chang, Lin, Chih-Yang, Zheng, Hao-Xuan, Chen, Chun-Kuei, Huang, Wei-Chen, Chen, Wen-Chung, Huang, Hui-Chun, Tsai, Tsung-Ming, Ma, Xiao-Hua, HaYear:
2019
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2912502
File:
PDF, 1.50 MB
english, 2019
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