Enhanced Device Stability of Ionic Gating Molybdenum...

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physica status solidi (RRL) - Rapid Research Letters 2019 / 05

Enhanced Device Stability of Ionic Gating Molybdenum Disulfide Transistors

Yang, Suk, Jang, Sukjin, Choi, Daehwan, Namgung, Seok Daniel, Kim, Hyung-Jun, Kwon, Jang-Yeon
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Language:
english
Journal:
physica status solidi (RRL) – Rapid Research Letters
DOI:
10.1002/pssr.201900142
Date:
May, 2019
File:
PDF, 907 KB
english, 2019
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