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Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics
Rybalka, S.B., Krayushkina, E.Yu., Demidov, A.A., Shishkina, O.A., Surin, B.P.Volume:
5
Language:
english
Journal:
International Journal of Physical Research
DOI:
10.14419/ijpr.v5i1.7065
Date:
January, 2017
File:
PDF, 386 KB
english, 2017