Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with...

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Sub‐3 V ZnO Electrolyte‐Gated Transistors and Circuits with Screen‐Printed and Photo‐Crosslinked Ion Gel Gate Dielectrics: New Routes to Improved Performance

Zare Bidoky, Fazel, Tang, Boxin, Ma, Rui, Jochem, Krystopher S., Hyun, Woo Jin, Song, Donghoon, Koester, Steven J., Lodge, Timothy P., Frisbie, C. Daniel
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Language:
english
Journal:
Advanced Functional Materials
DOI:
10.1002/adfm.201902028
Date:
May, 2019
File:
PDF, 2.03 MB
english, 2019
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