Study of Electron Transport in 4H-SiC by Using...

Brazilian Journal of Physics 2019 / 5

Study of Electron Transport in 4H-SiC by Using Nonequilibrium Statistical Ensemble Formalism

Vasconcelos, Jackelinne L., Rodrigues, Clóves G., Luzzi, Roberto
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Language:
english
Journal:
Brazilian Journal of Physics
DOI:
10.1007/s13538-019-00661-w
Date:
May, 2019
File:
PDF, 971 KB
english, 2019
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