The effect of the undoped GaN/buffer-layer interface on the...

Microelectronic Engineering 2019 / 06 Vol. 214

The effect of the undoped GaN/buffer-layer interface on the operation of Schottky diodes and MESFET devices

Noor Elahi, Asim M., Atalla, Mahmoud R.M., Mo, Chen, Zhang, Wenjun, Liu, Shengshi, Zhang, Zhifang, Jiang, Zhenyu, Liu, Jie, Sun, Xiaowei, Chang, Min, Zhang, Xuedian, Hsu, Jian
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Volume:
214
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.02.006
Date:
June, 2019
File:
PDF, 1.13 MB
english, 2019
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