InAs/GaSb superlattice photodetector with cutoff wavelength around 12 μm based on an Al-free nBn structure grown by MOCVD
Hao, Xiujun, Zhao, Yu, Wu, Qihua, Li, Xin, Teng, Yan, Xiong, Min, Huang, Yong, Chen, Baile, Huang, Jian, Deng, Zhuo, Yang, HuiLanguage:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab2006
Date:
May, 2019
File:
PDF, 1.20 MB
english, 2019