2.1 μm InGaSb quantum well lasers exhibiting the maximum...

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Superlattices and Microstructures 2019 / 5

2.1 μm InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers

Xie, Shengwen, Yang, Chengao, Huang, ShuShan, Yuan, Ye, zhang, Yi, Shang, Jinming, Cai, Chenyuan, Zhang, Yu, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan
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Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2019.05.002
Date:
May, 2019
File:
PDF, 2.66 MB
english, 2019
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