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[IEEE 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Budapest (2018.7.1-2018.7.5)] 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Radiation Effect on the Electron Transport Properties of SiO2/Si Interface: Role of Si Dangling-Bond Defects and Oxygen Vacancy
Qu, Guanghao, Min, Daomin, Zhao, Zhonghua, Frechette, Michel, Li, ShengtaoYear:
2018
DOI:
10.1109/ICD.2018.8514656
File:
PDF, 431 KB
2018