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Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate
Heuken, Lars, Alshahed, Muhammad, Ottaviani, Alessandro, Alomari, Mohammed, Fahle, Dirk, Heuken, Michael, Burghartz, Joachim N.Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab0406
Date:
June, 2019
File:
PDF, 1.17 MB
english, 2019