Temperature dependent lateral and vertical conduction...

Japanese Journal of Applied Physics 2019 / 06 Vol. 58; Iss. SC

Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate

Heuken, Lars, Alshahed, Muhammad, Ottaviani, Alessandro, Alomari, Mohammed, Fahle, Dirk, Heuken, Michael, Burghartz, Joachim N.
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Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab0406
Date:
June, 2019
File:
PDF, 1.17 MB
english, 2019
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