Characteristics of band modulation FET on sub 10 nm SOI

Japanese Journal of Applied Physics 2019 / 04 Vol. 58; Iss. SB

Characteristics of band modulation FET on sub 10 nm SOI

Kwon, Sehyun, Navarro, Carlos, Gamiz, Francisco, Cristoloveanu, Sorin, Galy, Phileppe, Choi, Minho, Kim, Yong Tae, Ahn, Jinho
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Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/aafc9f
Date:
April, 2019
File:
PDF, 1.69 MB
english, 2019
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