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Sublattice reversal in GaAs/Ge/GaAs (113)B heterostructures and its application to THz emitting devices based on a coupled multilayer cavity
Lu, Xiangmeng, Kumagai, Naoto, Minami, Yasuo, Kitada, TakahiroVolume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.04FH07
Date:
April, 2018
File:
PDF, 798 KB
english, 2018