Wafer scale on-axis homoepitaxial growth of 4H-SiC(0001)...

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Crystal Growth & Design 2019 / 05

Wafer scale on-axis homoepitaxial growth of 4H-SiC(0001) for high power devices: Influence of different gas phase chemistries and growth rate limitations

Ul Hassan, Jawad, Karhu, Robin, Lilja, Louise, Janzén, Erik
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Language:
english
Journal:
Crystal Growth & Design
DOI:
10.1021/acs.cgd.9b00141
Date:
May, 2019
File:
PDF, 849 KB
english, 2019
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