Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2019 / 05 Vol. 37; Iss. 3
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Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature range
Triendl, Fabian, Fleckl, Gernot, Schneider, Michael, Pfusterschmied, Georg, Schmid, UlrichVolume:
37
Language:
english
Journal:
Journal of Vacuum Science & Technology B
DOI:
10.1116/1.5094137
Date:
May, 2019
File:
PDF, 1.61 MB
english, 2019