Studying the Characteristics of Transistors Based on Gallium Nitride Heterostructures Grown by Ammonia Molecular Beam Epitaxy on Sapphire and Silicon Substrates
Andreev, A. A., Grishchenko, Yu. V., Ezubchenko, I. S., Chernykh, M. Ya., Kolobkova, E. M., Maiboroda, I. O., Chernykh, I. A., Zanaveskin, M. L.Volume:
45
Language:
english
Journal:
Technical Physics Letters
DOI:
10.1134/S1063785019020238
Date:
February, 2019
File:
PDF, 514 KB
english, 2019