Reliability concern of quasi-vertical GaN Schottky barrier...

Superlattices and Microstructures 2019 / 06 Vol. 130

Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress

Li, Sheng, Zhang, Chi, Liu, Siyang, Wei, Jiaxing, Zhang, Long, Sun, Weifeng, Zhu, Youhua, Zhang, Tingting, Wang, Dongsheng, Sun, Yinxia
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Volume:
130
Language:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2019.04.041
Date:
June, 2019
File:
PDF, 2.33 MB
english, 2019
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