Damage and recovery behavior of 4H-SiC implanted with He...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2019 / 06 Vol. 449

Damage and recovery behavior of 4H-SiC implanted with He ions

Yang, Yitao, Zhang, Chonghong, Su, Changhao, Ding, Zhaonan, Song, Yin
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Volume:
449
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DOI:
10.1016/j.nimb.2019.04.055
Date:
June, 2019
File:
PDF, 816 KB
2019
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