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A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications
Kunitake, Hitoshi, Ohshima, Kazuaki, Tsuda, Kazuki, Matsumoto, Noriko, Koshida, Tatsuki, Ohshita, Satoru, Sawai, Hiromi, Yanagisawa, Yuichi, Saga, Shiori, Arasawa, Ryo, Seki, Takako, Honda, Ryunosuke,Volume:
7
Year:
2019
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2019.2909751
File:
PDF, 2.12 MB
2019