Oxygen precipitate positive charge evolution upon annealing...

Journal of Physics Conference Series 2019 / 05 Vol. 1190

Oxygen precipitate positive charge evolution upon annealing of oxygen implanted silicon

Danilov, D, Vyvenko, O, Trushin, M, Loshachenko, A, Sobolev, N
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Volume:
1190
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/1190/1/012016
Date:
May, 2019
File:
PDF, 1.17 MB
english, 2019
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