Electron Tunneling SiGe RTD with Enhanced Current Density...

IEEJ Transactions on Electronics Information and Systems 2006 Vol. 126; Iss. 9

Electron Tunneling SiGe RTD with Enhanced Current Density Formed Using Quadruple-layer Buffer

Maekawa, Hirotaka, Sano, Yoshihiro, Ueno, Chihiro, Suda, Yoshiyuki
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Volume:
126
Year:
2006
Language:
english
Journal:
IEEJ Transactions on Electronics, Information and Systems
DOI:
10.1541/ieejeiss.126.1088
File:
PDF, 1.11 MB
english, 2006
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