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Donor–acceptor pair emission via defects with strong electron–phonon coupling in heavily doped Al x Ga 1− x N:Si layers with Al content x > 0.5
Osinnykh, Igor V., Malin, Timur V., Milakhin, Denis S., Plyusnin, Viktor F., Zhuravlev, Konstantin S.Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab0f1f
Date:
June, 2019
File:
PDF, 1.21 MB
english, 2019