Trap state characterization of Al 2 O 3 /AlInGaN/GaN metal-insulator-semiconductor heterostructures
Biswas, Debaleen, Torii, Naoki, Fujita, Hirotaka, Yoshida, Takahiro, Kubo, Toshiharu, Egawa, TakashiVolume:
34
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab1105
Date:
May, 2019
File:
PDF, 1.53 MB
2019