Formation of conductive AlN buffer layer using spontaneous via-holes and realization of vertical AlGaN Schottky diode on a Si substrate
Kurose, Noriko, Aoyagi, YoshinobuVolume:
125
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5058110
Date:
May, 2019
File:
PDF, 3.03 MB
english, 2019