Indium incorporation in homoepitaxial β-Ga 2...

Journal of Applied Physics 2019 / 05 Vol. 125; Iss. 19

Indium incorporation in homoepitaxial β-Ga 2 O 3 thin films grown by metal organic vapor phase epitaxy

Bin Anooz, S., Popp, A., Grüneberg, R., Wouters, C., Schewski, R., Schmidbauer, M., Albrecht, M., Fiedler, A., Ramsteiner, M., Klimm, D., Irmscher, K., Galazka, Z., Wagner, G.
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Volume:
125
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5090213
Date:
May, 2019
File:
PDF, 3.88 MB
english, 2019
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