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Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC
Son, Nguyen Tien, Stenberg, Pontus, Jokubavicius, Valdas, Abe, Hiroshi, Ohshima, Takeshi, Ul Hassan, Jawad, Ivanov, Ivan G.Volume:
114
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.5098070
Date:
May, 2019
File:
PDF, 1.37 MB
english, 2019