InGaN quantum wells with improved photoluminescence...

Japanese Journal of Applied Physics 2019 / 06 Vol. 58; Iss. SC

InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of the InGaN underlayer

Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tasai, Kunihiko, Yamaguchi, Atsushi A., Tomiya, Shigetaka
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Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab0f11
Date:
June, 2019
File:
PDF, 659 KB
english, 2019
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