He and O ion implantation induced defects in Si crystal...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2019 / 08 Vol. 453

He and O ion implantation induced defects in Si crystal studied using slow positron annihilation spectroscopy

Sharma, S.K., Sudarshan, K., Menon, R., Nabhiraj, P.Y., Pujari, P.K.
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Volume:
453
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DOI:
10.1016/j.nimb.2019.05.056
Date:
August, 2019
File:
PDF, 702 KB
english, 2019
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