IR diode structures based on II-Type InAs/GaSb...

Journal of Physics Conference Series 2019 / 03 Vol. 1199

IR diode structures based on II-Type InAs/GaSb superlattices grown by MOCVD

Fedorov, I V, Levin, R V, Nevedomsky, V N, Usikova, A A, Bazhenov, N L, Mynbaev, K D, Pushnyi, B V, Zegrya, G G
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Volume:
1199
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/1199/1/012016
Date:
March, 2019
File:
PDF, 1.14 MB
english, 2019
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