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Microelectronic Engineering 2019 / 5

Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

Nifa, I., Leroux, C., Torres, A., Charles, M., Reimbold, G., Ghibaudo, G., Bano, E.
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Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.05.003
Date:
May, 2019
File:
PDF, 879 KB
2019
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