Ultra-high phosphorus-doped epitaxial Ge layers grown by...

Materials Science in Semiconductor Processing 2019 / 09 Vol. 100

Ultra-high phosphorus-doped epitaxial Ge layers grown by HWCVD method on Si substrates

Shengurov, Vladimir, Denisov, Sergei, Chalkov, Vadim, Trushin, Vladimir, Zaitsev, Andrei, Prokhorov, Dmitry, Filatov, Dmitry, Zdoroveishchev, Anton, Ved, Mikhail, Kudrin, Alexey, Dorokhin, Mikhail, Bu
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Volume:
100
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2019.05.005
Date:
September, 2019
File:
PDF, 865 KB
2019
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