In-pile tensile creep of chemical vapor deposited silicon...

Journal of Nuclear Materials 2019 / 08 Vol. 521

In-pile tensile creep of chemical vapor deposited silicon carbide at 300 °C

Koyanagi, Takaaki, Terrani, Kurt, Karlsen, Torill, Andersson, Vendi, Sprouster, David, Ecker, Lynne, Katoh, Yutai
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Volume:
521
Journal:
Journal of Nuclear Materials
DOI:
10.1016/j.jnucmat.2019.04.048
Date:
August, 2019
File:
PDF, 1.81 MB
2019
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