Low-temperature InGaAs oxidation using oxygen neutral beam

Low-temperature InGaAs oxidation using oxygen neutral beam

Lee, Chang-Yong, Higo, Akio, Thomas, Cédric, Okada, Takeru, Ozaki, Takuya, Sugiyama, Masakazu, Nakano, Yoshiaki, Samukawa, Seiji
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Volume:
57
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.070305
Date:
July, 2018
File:
PDF, 964 KB
2018
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