An Optimized p+ Shielding 4H-SiC Trench Gate MOSFETs...

Materials Science Forum 2019 / 5 Vol. 954

An Optimized p+ Shielding 4H-SiC Trench Gate MOSFETs Structure with Floating Regions

Tian, Kai, Xia, Jing Hua, Qi, Jin Wei, Ma, Shen Hui, Yang, Fei, Zhang, An Ping
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Volume:
954
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.954.157
Date:
May, 2019
File:
PDF, 2.37 MB
english, 2019
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