Thermally stable iridium contacts to highly doped...

Microelectronic Engineering 2019 / 07 Vol. 215

Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistors

Brahem, M., Mogilatenko, A., Stoppel, D., Berger, D., Hochheim, S., Rentner, D., Ostermay, I., Reiner, M., Boppel, S., Nosaeva, K., Weimann, N.
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Volume:
215
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.111017
Date:
July, 2019
File:
PDF, 1.25 MB
english, 2019
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