Controlled oxide interlayer for improving reliability of...

Japanese Journal of Applied Physics 2019 / 06 Vol. 58; Iss. SC

Controlled oxide interlayer for improving reliability of SiO 2 /GaN MOS devices

Yamada, Takahiro, Terashima, Daiki, Nozaki, Mikito, Yamada, Hisashi, Takahashi, Tokio, Shimizu, Mitsuaki, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
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Volume:
58
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab09e0
Date:
June, 2019
File:
PDF, 844 KB
2019
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