Optimization of the depth resolution for profiling SiO...

Surface and Interface Analysis 2019 / 07 Vol. 51; Iss. 7

Optimization of the depth resolution for profiling SiO 2 /SiC interfaces by dual‐beam TOF‐SIMS combined with etching

Sameshima, Junichiro, Takenaka, Aya, Muraji, Yuichi, Ogawa, Shingo, Yoshikawa, Masanobu, Suganuma, Katsuaki
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Volume:
51
Language:
english
Journal:
Surface and Interface Analysis
DOI:
10.1002/sia.6645
Date:
July, 2019
File:
PDF, 1.67 MB
english, 2019
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