Ionic Glass-Gated 2D Material-Based Phototransistor: MoSe...

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Advanced Functional Materials 2019 / 06

Ionic Glass-Gated 2D Material-Based Phototransistor: MoSe 2 over LaF 3 as Case Study

Noumbé, Ulrich Nguétchuissi, Gréboval, Charlie, Livache, Clément, Brule, Thibault, Doudin, Bernard, Ouerghi, Abdelkarim, Lhuillier, Emmanuel, Dayen, Jean-Francois
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Language:
english
Journal:
Advanced Functional Materials
DOI:
10.1002/adfm.201902723
Date:
June, 2019
File:
PDF, 1.35 MB
english, 2019
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