Environmental factors controlled resistive switching memory...

Results in Physics 2019 / 06 Vol. 13

Environmental factors controlled resistive switching memory behavior based on BiFeO3/Cu2ZnSnSe4 heterojunction

Li, Xiaoxia, Sun, Bai, Hou, Wentao, Chen, Jiao, Zheng, Pingping, Mao, Shuangsuo, Zhu, Shouhui, Xia, Yudong, Fu, Guoqiang
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Volume:
13
Language:
english
Journal:
Results in Physics
DOI:
10.1016/j.rinp.2019.102308
Date:
June, 2019
File:
PDF, 2.41 MB
english, 2019
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