Reliability experimentation of 1200 V SiC power n-MOSFETs by accelerated thermal aging and bias temperature instability
Ahmed, Moinuddin, Kucukgok, Bahadir, Yanguas-Gil, Angel, Hryn, JohnVolume:
1
Language:
english
Journal:
SN Applied Sciences
DOI:
10.1007/s42452-019-0783-y
Date:
July, 2019
File:
PDF, 901 KB
english, 2019