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Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates
Hoshii, Takuya, Nakajima, Akira, Nishizawa, Shin-ichi, Ohashi, Hiromichi, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Tsutsui, KazuoVolume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab1c78
Date:
June, 2019
File:
PDF, 724 KB
english, 2019