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Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications
Murugapandiyan, P., Rajya Lakshmi, V., Wasim, Mohammed, Meenakshi Sundaram, K.Language:
english
Journal:
International Journal of Electronics Letters
DOI:
10.1080/21681724.2019.1636295
Date:
June, 2019
File:
PDF, 2.27 MB
english, 2019