Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar...

Japanese Journal of Applied Physics 2019 / 07 Vol. 58; Iss. 7

Fabrication of a GaInN/GaInP/GaInAs/Ge four-junction solar cell using the wafer bonding technology

Takahashi, Kazuya, Shinoda, Ryoji, Mitsufuji, Syun, Iwaya, Motoaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Hattori, Tomokazu, Akasaki, Isamu, Amano, Hiroshi
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Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab26ad
Date:
July, 2019
File:
PDF, 671 KB
english, 2019
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