Homoepitaxial growth by halide vapor phase epitaxy of...

Japanese Journal of Applied Physics 2019 / 06 Vol. 58; Iss. SC

Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds

Amilusik, M., Sochacki, T., Fijalkowski, M., Lucznik, B., Iwinska, M., Sidor, A., Teisseyre, H., Domagała, J., Grzegory, I., Bockowski, M.
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Volume:
58
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab1065
Date:
June, 2019
File:
PDF, 824 KB
english, 2019
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