Improved RF and DC Performance in AlGaN/GaN HEMT by P-type...

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AEU - International Journal of Electronics and Communications 2019 / 6

Improved RF and DC Performance in AlGaN/GaN HEMT by P-type doping in GaN Buffer for Millimetre-Wave Applications

Arivazhagan, L., Nirmal, D., Godfrey, D., Ajayan, J., Prajoon, P., Augustine Fletcher, A.S., Amir Anton Jone, A., Raj kumar, J.S.
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Language:
english
Journal:
AEU - International Journal of Electronics and Communications
DOI:
10.1016/j.aeue.2019.06.015
Date:
June, 2019
File:
PDF, 1.47 MB
english, 2019
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