High performance InGaAs FinFETs with raised source/drain...

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Japanese Journal of Applied Physics 2019 / 06

High performance InGaAs FinFETs with raised source/drain extensions

Convertino, Clarissa, Zota, Cezar, Caimi, Daniele, Sousa, Marilyne, Moselund, Kirsten Emilie, Czornomaz, Lukas
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Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/1347-4065/ab2c97
Date:
June, 2019
File:
PDF, 919 KB
english, 2019
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