Effect of oxygen vacancies on the ferroelectric...

Microelectronic Engineering 2019 / 08 Vol. 216

Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation

Islamov, D.R., Perevalov, T.V.
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Volume:
216
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2019.111041
Date:
August, 2019
File:
PDF, 778 KB
english, 2019
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